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2N6849
- Part Number:
- 2N6849
- Category:
- -
- Manufacturer:
- Microsemi Corporation
- Description:
- MOSFET P-CH 100V 6.5A TO39
- Encapsulation:
- -
- Package:
- Bulk
- Quantity:
- 0
- RoHS Status:
- Supported
- PDF:
- -
MOQ: 0
| Qty | Price | Total |
|---|---|---|
| - | ||
Product Parameters
| Part Status | Obsolete |
|---|---|
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Supplier Device Package | TO-39 |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Package / Case | TO-205AF Metal Can |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
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