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SI2307BDS-T1-GE3
- Part Number:
- SI2307BDS-T1-GE3
- Category:
- -
- Manufacturer:
- Vishay Siliconix
- Description:
- MOSFET P-CH 30V 2.5A SOT23-3
- Encapsulation:
- -
- Package:
- Cut Tape (CT)
- Quantity:
- 3989
- RoHS Status:
- Supported
MOQ: 1
| Qty | Price | Total |
|---|---|---|
| 1+ | $1.05 | $1.05 |
| 10+ | $0.65 | $6.5 |
| 100+ | $0.43 | $43 |
| 500+ | $0.33 | $165 |
| 1000+ | $0.3 | $300 |
Product Parameters
| Part Status | Obsolete |
|---|---|
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Grade | - |
| Qualification | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 15 V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 3.2A, 10V |
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