TPCC8105,L1Q

Part Number:
TPCC8105,L1Q
Category:
-
Description:
PB-F POWER MOSFET TRANSISTOR TSO
Encapsulation:
-
Package:
Cut Tape (CT)
Quantity:
2799
RoHS Status:
Supported
Share:
PDF:

MOQ: 1

Qty Price Total
1+ $1.06 $1.06
10+ $0.71 $7.1
100+ $0.49 $49
500+ $0.43 $215
1000+ $0.38 $380
2000+ $0.35 $700

Product Parameters

Part Status Active
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
FET Type P-Channel
Operating Temperature 150°C
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Package / Case 8-VDFN Exposed Pad
Current - Continuous Drain (Id) @ 25°C 23A (Ta)
Vgs (Max) +20V, -25V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id 2V @ 500µA
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 11.5A, 10V